• DocumentCode
    1659849
  • Title

    Sub-250nm room temperature optical gain from AlGaN/AlN multiple quantum wells structures

  • Author

    Pecora, Emanuele Francesco ; Zhang, Wei ; Zhou, Lin ; Smith, David J. ; Yin, Jian ; Paiella, Roberto ; Dal Negro, Luca ; Moustakas, Theodore D.

  • Author_Institution
    Dept. of Electr. & Comput. Eng. & Photonics Center, Boston Univ., Boston, MA, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate room temperature, low threshold, deep-UV, TE polarized optical gain of 118 ± 9 cm-1 at a pumping fluence of 15 μJ/cm2 in AlGaN/AlN structures grown by Molecular Beam Epitaxy.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; optical materials; quantum well lasers; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; AlGaN-AlN; molecular beam epitaxy; multiple quantum wells structures; optical gain; pumping fluence; room temperature; temperature 293 K to 298 K; Aluminum gallium nitride; Biomedical optical imaging; Optical polarization; Optical pumping; Optical saturation; Plasma temperature; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6325894
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1659849