• DocumentCode
    1659975
  • Title

    Enhanced field emission properties of IrO2 coated carbon nanotube bundle arrays

  • Author

    Chen, Yi-Min ; Chen, Jin-An ; Huang, Ying-Sheng ; Lee, Kuei-Yi ; Tiong, Kwong-Kau

  • Author_Institution
    Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
  • fYear
    2010
  • Firstpage
    206
  • Lastpage
    207
  • Abstract
    In order to enhance field emission (FE) property of carbon nanotubes (CNTs), IrO2 nanocrystals (NCs) were coated on the patterned CNT bundle arrays via reactive RF magnetron sputtering. The properties of IrO2/CNTs composites were characterized by field-emission scanning electron microscopy and transmission electron microscopy. Based on the combined effects of geometrical structure of IrO2/CNTs composites, and the natural conductor and enhanced resistance to oxidation properties of IrO2, a low turn-on field of 0.7 V/¿m at a current density of 0.1 ¿A/cm2, a low threshold field of 2.3 V/¿m at a current density of 1 mA/cm2, a high field enhancement factor of 4 × 105, and a long-term stability have been achieved for the IrO2 coated patterned CNT bundle arrays.
  • Keywords
    arrays; carbon nanotubes; current density; field emission; field emission electron microscopy; iridium compounds; nanocomposites; oxidation; scanning electron microscopy; sputtered coatings; transmission electron microscopy; C-IrO2; coated carbon nanotube bundle arrays; composites; current density; enhanced field emission property; enhanced resistance; field-emission scanning electron microscopy; geometrical structure; high field enhancement factor; long-term stability; nanocrystals; natural conductor; oxidation; reactive RF magnetron sputtering; transmission electron microscopy; Carbon nanotubes; Conductors; Current density; Iron; Magnetic properties; Nanocrystals; Radio frequency; Scanning electron microscopy; Sputtering; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424633
  • Filename
    5424633
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1659975