Pressure tolerant power IGBTs for subsea applications

This paper discusses methods to adapt power semiconductors like IGBTs for subsea operation, in from 1 bar to high pressure environment, and presents tests done to demonstrate reliable operation. The paper has focus on three main challenges; the liquid dielectric and how to avoid air filled voids, where the highest electric voltage stress occur, and whether operation in liquid without gel influence on the switching. Different test approaches and test results presented show that IGBTs operate well with Midel^reg7131 as dielectric media. Potential advantages and challenges of bonded and press-pack technologies are shown to be quite different.