Title :
The Quantum Confined Stark Effect in Ge/SiGe Quantum Wells: An efficient electroabsorption mechanism for silicon-based applications
Author :
Roth, Jonathan E. ; Fidaner, Onur ; Schaevitz, Rebecca K. ; Edwards, Elizabeth H. ; Kuo, Yu-Hsuan ; Kamins, Theodore I. ; Harris, James S. ; Miller, David A B
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
Abstract :
The recent discovery of the quantum confined Stark effect in Ge/SiGe quantum wells with absorption coefficient modulation comparable to III-V materials will permit compact, low-power photonics components densely integrated with silicon electronics.
Keywords :
absorption coefficients; electroabsorption; elemental semiconductors; germanium; optical materials; quantum confined Stark effect; semiconductor quantum wells; silicon compounds; Ge-SiGe; Ge-SiGe quantum wells; absorption coefficient modulation; electroabsorption; integrated photonics; quantum confined Stark effect; silicon electronics; Absorption; Germanium silicon alloys; High speed optical techniques; III-V semiconductor materials; Optical buffering; Optical modulation; Potential well; Silicon germanium; Stark effect; Substrates;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347709
