DocumentCode
1660113
Title
The Quantum Confined Stark Effect in Ge/SiGe Quantum Wells: An efficient electroabsorption mechanism for silicon-based applications
Author
Roth, Jonathan E. ; Fidaner, Onur ; Schaevitz, Rebecca K. ; Edwards, Elizabeth H. ; Kuo, Yu-Hsuan ; Kamins, Theodore I. ; Harris, James S. ; Miller, David A B
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
fYear
2007
Firstpage
1
Lastpage
3
Abstract
The recent discovery of the quantum confined Stark effect in Ge/SiGe quantum wells with absorption coefficient modulation comparable to III-V materials will permit compact, low-power photonics components densely integrated with silicon electronics.
Keywords
absorption coefficients; electroabsorption; elemental semiconductors; germanium; optical materials; quantum confined Stark effect; semiconductor quantum wells; silicon compounds; Ge-SiGe; Ge-SiGe quantum wells; absorption coefficient modulation; electroabsorption; integrated photonics; quantum confined Stark effect; silicon electronics; Absorption; Germanium silicon alloys; High speed optical techniques; III-V semiconductor materials; Optical buffering; Optical modulation; Potential well; Silicon germanium; Stark effect; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-0934-1
Type
conf
DOI
10.1109/GROUP4.2007.4347709
Filename
4347709
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