DocumentCode
1660169
Title
Femtosecond carrier dynamics in Ge/SiGe quantum wells
Author
Claussen, S. ; Tang, L. ; Roth, J. ; Fidaner, O. ; Latif, S. ; Miller, D.A.B.
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
fYear
2007
Firstpage
1
Lastpage
3
Abstract
We resolve photoinduced changes in carrier populations of Ge SiGe quantum wells using femtosecond pump-probe spectroscopy. Absorption transients 400 fs indicate rapid GammararrL intervalley scattering that may explain exciton linewidth and suggest saturable absorber applications.
Keywords
elemental semiconductors; excitons; germanium; optical pumping; optical saturable absorption; semiconductor quantum wells; silicon compounds; time resolved spectroscopy; Ge-SiGe; Ge-SiGe quantum wells; absorption transients; carrier dynamics; exciton linewidth; femtosecond pump-probe spectroscopy; intervalley scattering; saturable absorber; Absorption; Bleaching; Fiber lasers; Germanium silicon alloys; Laser excitation; Optical pulses; Polarization; Probes; Pump lasers; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-0934-1
Type
conf
DOI
10.1109/GROUP4.2007.4347712
Filename
4347712
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