Title :
Femtosecond carrier dynamics in Ge/SiGe quantum wells
Author :
Claussen, S. ; Tang, L. ; Roth, J. ; Fidaner, O. ; Latif, S. ; Miller, D.A.B.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
Abstract :
We resolve photoinduced changes in carrier populations of Ge SiGe quantum wells using femtosecond pump-probe spectroscopy. Absorption transients 400 fs indicate rapid GammararrL intervalley scattering that may explain exciton linewidth and suggest saturable absorber applications.
Keywords :
elemental semiconductors; excitons; germanium; optical pumping; optical saturable absorption; semiconductor quantum wells; silicon compounds; time resolved spectroscopy; Ge-SiGe; Ge-SiGe quantum wells; absorption transients; carrier dynamics; exciton linewidth; femtosecond pump-probe spectroscopy; intervalley scattering; saturable absorber; Absorption; Bleaching; Fiber lasers; Germanium silicon alloys; Laser excitation; Optical pulses; Polarization; Probes; Pump lasers; Silicon germanium;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347712
