• DocumentCode
    1660213
  • Title

    Detection of CO and NH3 mixed gas using single-walled carbon nanotubes

  • Author

    Dong, Ki-Young ; Lee, Jinwoo ; Ham, Dae-Jin ; Choi, Jinil ; Hwang, In-Sung ; Lee, Jong-Heun ; Choi, Hyang Hee ; Ju, Byeong-Kwon

  • Author_Institution
    Display & Nanosystem Lab., Korea Univ., Seoul, South Korea
  • fYear
    2010
  • Firstpage
    676
  • Lastpage
    677
  • Abstract
    We fabricated a carbon nanotube based gas sensor for the detection of CO and NH3 mixed gas. Conventional photolithography technology was applied for the localization of sensing materials and the sensor fabrication. Single walled carbon nanotubes were dispersed in Sodium Dodecyl Sulfate (SDS) solution. The whole surface was covered by a photoresist except window areas between two electrodes. Carbon nanotubes were carefully dropped over the window areas and dried at 220°C over a hot plate. Then, the photoresist was removed using acetone. CO and NH3 mixed gas was delivered into a chamber at room temperature with nitrogen as a carrier gas. For comparison, each gas was applied to our sensor separately. Electrical resistance was measured for sensing performance.
  • Keywords
    ammonia; carbon compounds; carbon nanotubes; drying; electrical resistivity; gas mixtures; gas sensors; nanofabrication; nanolithography; nanosensors; nanotube devices; photolithography; C; CO; NH3; SDS solution; ammonia detection; carbon monoxide detection; carbon nanotube dispersion; drying; electrical resistance; gas sensor fabrication; mixed gas detection; photolithography; photoresist; sensing material localization; single-walled carbon nanotube sensor; sodium dodecyl sulfate solution; temperature 220 degC; temperature 293 K to 298 K; Carbon nanotubes; Electric resistance; Electrical resistance measurement; Electrodes; Fabrication; Gas detectors; Lithography; Nitrogen; Resists; Temperature sensors; CO; MEMS; NH3; gas sensor; single-walled carbon nanotues;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424641
  • Filename
    5424641