Title :
Analytical current model for dual-gate MOSFET
Author :
Karahahliloglu, K. ; Dündar, Günhan
Author_Institution :
Dept. of Electr. & Electron. Eng., Bogazici Univ., Istanbul, Turkey
fDate :
6/23/1905 12:00:00 AM
Abstract :
An analytical current model for dual-gate MOSFET structures is presented. The standard method for MOSFET modeling is investigated for dual and multi-gate MOSFETs. For the difficulties arising in such methods, an energy-based approximation is introduced to obtain a quasi-Fermi potential solution that will be valid along the channel. An explicit current expression for the dual gate MOSFET is obtained by making use of this solution. The analytical results are compared with the results of the PISCES 2D device simulator program, for various biasing conditions
Keywords :
MOSFET; electric current; semiconductor device models; MOSFET modeling; analytical current model; biasing conditions; dual-gate MOSFET structures; energy-based approximation; quasi-Fermi potential solution; Analytical models; Differential equations; Linear approximation; MOSFET circuits; Nonlinear equations; Partial differential equations; Poisson equations; Power engineering and energy; Taylor series;
Conference_Titel :
Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on
Print_ISBN :
0-7803-7057-0
DOI :
10.1109/ICECS.2001.957649
