Title :
Advances in Si-Ge-Sn materials science and technology
Author :
Kouvetakis, John ; Tolle, John ; Menendez, J. ; D´Costa, Vijay Richard
Author_Institution :
Chem. & Phys., Arizona State Univ., Tempe, AZ
Abstract :
SiGeSn-based optical materials are synthesized on silicon and designed to undergo indirect-to-direct bandgap transitions via strain engineering and composition tuning across the IR range. These provide enabling buffer-layer technologies for integration of semiconductors with Si.
Keywords :
Ge-Si alloys; buffer layers; integrated optoelectronics; optical materials; optical tuning; strontium alloys; IR range; Si-Ge-Sn; buffer-layer technologies; composition tuning; indirect-to-direct bandgap transitions; optical materials; semiconductor integration; strain engineering; Atomic layer deposition; Detectors; Displays; Lattices; Materials science and technology; Optical design; Optical materials; Photonic band gap; Silicon alloys; Tin;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347715
