Title :
Light-emissive nonvolatile memory based on nanocrystalline porous Si
Author :
Gelloz, B. ; Yoshida, Y. ; Koshida, N.
Author_Institution :
Grad. Sch. of Eng., Tokyo Univ. of Agric. & Technol., Koganei
Abstract :
The characteristics of light-emissive nonvolatile memory based on nanocrystalline Si are dramatically improved by complete surface passivation with high-quality tunnel oxides. Electrically or optically stored information can be read out as either electrical or optical signal.
Keywords :
elemental semiconductors; nanostructured materials; optical storage; passivation; porous semiconductors; silicon; storage media; surface treatment; Si; light emissivity; nanocrystalline porous Si; nonvolatile memory; surface passivation; tunnel oxides; Diodes; Electrodes; Electron optics; Indium tin oxide; Nanocrystals; Nonvolatile memory; Optical distortion; Silicon; Stability; Writing;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347716
