Title :
Optically activated Si nanowires and nanoribbons as a platform for Si-based photonics
Author :
Kim, M.-H. ; Park, T.-E. ; Kim, U.-K. ; Choi, H.J. ; Sung, G.Y. ; Shin, J.-H. ; Suh, K.
Author_Institution :
Sch. of Adv. Mater. Sci. & Eng., Yonsei Univ., Yonsei
Abstract :
This paper reports on optical activation of Si nanowires and Si nanoribbons by coupling Er. Single crystalline Si nanowires with diameters 100 nm and with length exceeding mum, and Si nanoribbons with thickness of 5-10 nm and with length of a few hundred of mum were grown by vapor-liquid-solid (VLS) growth mechanism using metal catalysts. Such Er-activated Si nanowires display strong Er3+ luminescence, excited via carriers in Si nanowires, yet comparable to pure silica in luminescence efficiency, showing promise of becoming a new material platform for Si-based photonics.
Keywords :
elemental semiconductors; erbium; nanowires; optical materials; photoluminescence; silicon; Er-activation; Si; Si nanoribbons; Si nanowires; luminescence; optical activation; vapor-liquid-solid growth; Argon; Coatings; Erbium; Isolation technology; Luminescence; Materials science and technology; Nanowires; Optical films; Photonics; Scanning electron microscopy;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347719