Title :
HF gate drive circuit for a normally-on SiC JFET with inherent safety
Author :
Takuno, Tsuguhiro ; Hikihara, Takashi ; Tsuno, Takashi ; Hatsukawa, Satoshi
Author_Institution :
Kyoto Univ., Kyoto, Japan
Abstract :
A gate drive circuit for a silicon carbide (SiC) JFET is introduced from the standpoint of application to power conversion circuit. This gate drive circuit enables normally-on JFETs as close as normally-off devices at high switching frequency. The voltage and current responses of the implemented circuit are discussed under loads at the switching frequencies over 1 MHz.
Keywords :
driver circuits; field effect transistor switches; power convertors; silicon compounds; wide band gap semiconductors; JFET; SiC; gate drive circuit; power conversion circuit; Hafnium; JFET circuits; MOSFET circuits; Power conversion; Power semiconductor switches; Safety; Silicon carbide; Switching frequency; Voltage; Wide band gap semiconductors; Device application; High frequency power converter; High speed drive; JFET; New switching devices; Power semiconductor device; Power supply; Safety; SiC-device; Silicon Carbide;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
