Self-rectifying resistive memory based on Au nanocrystal-embedded zirconium oxide for crossbar array application

Author

Zuo, Qingyun ; Long, Shibing ; Liu, Qi ; Zhang, Sen ; Wang, Qin ; Li, Yingtao ; Wang, Yan ; Liu, Ming

Author_Institution

Lab. of Nanofabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China

fYear

2010

Firstpage

228

Lastpage

229

Abstract

The self-rectifying resistive switching behavior is investigated in the Au/ZrO₂: nc-Au/n+ Si sandwich structure with the Au nanocrystals embedded ZrO₂ films (ZrO₂: nc-Au) fabricated by e-beam evaporation. The rectification ratio is obtained to be 7Ã—10² under Â±0.5 V at low-resistance state (LRS), which can alleviate the cross talk effect in crossbar structure arrays without additional switching elements. The different current conduction mechanisms at LRS are studied. A model is proposed to explain this self-rectifying resistive switching behavior.

Keywords

MIS structures; electrical conductivity transitions; elemental semiconductors; gold; nanostructured materials; rectification; silicon; zirconium compounds; Au nanocrystal-embedded zirconium oxide; Au-ZrO₂-Au-Si; cross talk effect; crossbar array; current conduction mechanisms; e-beam evaporation; low resistance state; rectification ratio; sandwich structure; self-rectifying resistive memory; self-rectifying resistive switching; Annealing; Diodes; Gold; Leakage current; Nanocrystals; Sandwich structures; Semiconductor films; Substrates; Voltage; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424649

Filename

5424649