Enhanced device performance using lightly doped channel junctionless accumulation-mode FinFET

Author

Pal, Pankaj Kumar ; Nehra, Dilsukh ; Kaushik, Brajesh Kumar ; Dasgupta, Sudeb

Author_Institution

Dept. of Electron. & Commun. Eng., Indian Inst. of Technol., Roorkee, Roorkee, India

fYear

2015

Firstpage

1

Lastpage

5

Abstract

Recently, junctionless transistor architectures with improved short channel characteristics have been extensively studied. JLTs, unlike inversion mode transistors (IMT), do not require precise control of doping profile in sub-20nm technology nodes. However, due to its highly doped channel, it faces several other challenges that limit its usage. To overcome these challenges, we present a lightly doped channel junctionless accumulation-mode (LDC-JAM) FinFET that provides excellent electrostatic integrity as well as reduction in short channel effects (SCEs) in comparison to the conventional junctionless FETs (conv-JLT). It is observed that the drive current and the channel mobility is enhanced using the proposed LDC-JAM FinFET. The effect of equivalent oxide thickness, fin thickness, and source/drain doping concentration on the overall device performance is analyzed and compared.

Keywords

MOSFET; doping profiles; semiconductor doping; accumulation mode FinFET; channel reduction; doping profile; enhanced device performance; junctionless transistor; lightly doped FinFET; lightly doped channel junctionless FinFET; short channel characteristics; short channel effect; Doping; FinFETs; Leakage currents; Logic gates; Performance evaluation; Accumulation-mode transitor (AMT); FinFETs; junctionless transistors; short channel effects (SCEs);

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2015 12th International Conference on

Conference_Location

Hua Hin

Type

conf

DOI

10.1109/ECTICon.2015.7206988

Filename

7206988