DocumentCode
1660549
Title
Si-Ge Quantum Well and Cascade Structures for Optoelectronics
Author
Grutzmacher, Detlev ; Mussler, Gregor
Author_Institution
Inst. of Bio- & Nanotechnol. Res. Center Juelich, Julich
fYear
2007
Firstpage
1
Lastpage
3
Abstract
Low dimensional quantum structures may be suitable to overcome limitations given by the indirect bandgap of Si. The paper discusses the physics and technology of Si ´SiGe and SiGe/Ge quantum wells for cascade and modulator devices.
Keywords
Ge-Si alloys; elemental semiconductors; germanium; integrated optoelectronics; optical modulation; quantum cascade lasers; semiconductor materials; semiconductor quantum wells; silicon; Si-SiGe; SiGe-Ge; cascade structures; indirect bandgap; low dimensional quantum structures; modulator devices; optoelectronic devices; quantum wells; Crystals; Germanium silicon alloys; Molecular beam epitaxial growth; Optical buffering; Optical devices; Optical modulation; Optical pumping; Quantum cascade lasers; Scanning electron microscopy; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-0934-1
Type
conf
DOI
10.1109/GROUP4.2007.4347729
Filename
4347729
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