DocumentCode
1660561
Title
Towards a monolithically-integrated electrically-pumped Si light emitter technology using epitaxial erbium oxide
Author
Sabnis, Vijit A. ; Yuen, Homan B. ; Jamora, Aleta ; Semans, Scott ; Atanackovic, Petar ; Weldon, James
Author_Institution
Translucent Inc., Palo Alto, CA
fYear
2007
Firstpage
1
Lastpage
3
Abstract
We present epitaxial erbium oxide films on Si as a potential light emitter technology for integration with CMOS electronics. These films offer strong photoluminescence and can be integrated into heterostructures for providing photodetection and electroluminescence.
Keywords
CMOS integrated circuits; electro-optical devices; electroluminescent devices; elemental semiconductors; epitaxial growth; erbium compounds; photodetectors; photoluminescence; silicon; CMOS electronics; ErO-Si; Si; electroluminescence; epitaxial erbium oxide films; monolithically-integrated electrically-pumped Si light emitter technology; photodetection; photoluminescence; CMOS technology; Erbium; Light emitting diodes; Luminescence; Optical buffering; Optical films; Photonic band gap; Semiconductor films; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-0934-1
Type
conf
DOI
10.1109/GROUP4.2007.4347730
Filename
4347730
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