Circuit design of the complementary pixel structure for a wide dynamic range CIS

In this paper, we propose a new complementary image sensor pixel structure by improving the conventional 3TR pixel structure. Proposed complementary pixel structure for wide dynamic range CIS consists of photo diode, PMOS reset transistor, several PMOS and NMOS transistors for complementary signals. We show SPICE simulation results of the complementary image pixel structure for optimization. Proposed complementary pixel was fabricated with 0.5 ¿m 1-poly 2-metal standard CMOS process. From the measured results, output voltage of the proposed pixel is 0.8 V to 3.8 V in condition of the 5 V power supply. These output signals give enough chances to detect wide operation coverage.