Title :
Light-Emitting Transistor Based on Ultra-Thin Silicon
Author :
Saito, S. ; Hisamoto, D. ; Shimizu, H. ; Hamamura, H. ; Tsuchiya, R. ; Matsui, Y. ; Mine, T. ; Arai, T. ; Sugii, N. ; Torii, K. ; Kimura, S. ; Onai, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo
Abstract :
We confirmed enhanced electroluminescence by lateral carrier injections to quantum confined ultra-thin silicon. The optical intensity can be controlled by the back gate voltage, and the device operates as a light-emitting transistor.
Keywords :
electroluminescent devices; elemental semiconductors; light emitting devices; phototransistors; silicon; Si; back gate voltage; electroluminescence; lateral carrier injection; light-emitting transistor; optical intensity control; quantum confined ultra-thin silicon; Electrodes; Electron optics; Lighting control; Optical control; Optical device fabrication; Optical devices; Optical interconnections; Potential well; Silicon on insulator technology; Voltage control;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347735
