DocumentCode
1660683
Title
Manufacturability of vacuum microtubes
Author
Mil´shtein, S. ; Kozloff, A. ; Therrien, J.
Author_Institution
Adv. Electron. Technol. Center, Massachusetts Univ., Lowell, MA, USA
fYear
1994
Firstpage
269
Lastpage
271
Abstract
Vacuum microtubes (VMs), a new breed of vacuum tube electronics and solid state technology, are superior in speed, power, radiation hardness and temperature stability than semiconductor-based diodes and transistors. Electrons generated by cold emission, accelerated by an electric field to a velocity of about 6·108 cm/s, travel very short distances of about 1 μm in VMs. With their extremely short transit time, it is possible for VMs to operate at frequencies approaching hundreds of GHz. State of the art studies have demonstrated a few major drawbacks to reliable operation of VMs, namely, unpredictable position of the emitting spot, fluctuating or insufficient emission current, damage to the emitters by excessive electric field, and fundamental problems in producing arrays of emitters with equally sharp apices. In this study we addressed the spreading of technological parameters, such as work function φ, field enhancement factor β´, and emitting area α, and their impact on the operation of a VM. Two designs are discussed. The first design requires low φ on the emitter, and no sharpening or etching (β´=1). The design incorporates low φ regions to localize the emission. We feel that VMs have limited flexibility when designed to operate only by electric field control. Therefore, we propose a second design which operates with a photoemitting cathode for microwave and optoelectronic applications. Using Fowler-Nordheim (F-N) tunneling theory we estimated various manufacturable designs of cold emitter devices and phototubes. Our experimental designs are still not manufacturing prototypes, however; because of their simplicity, they can be produced by almost any semiconductor foundry
Keywords
vacuum microelectronics; 1 micron; Fowler-Nordheim tunneling theory; cold emission; emission current; emitting area; emitting spot; field enhancement factor; photoemitting cathode; phototubes; radiation hardness; temperature stability; transit time; vacuum microtubes; work function; Electron tubes; Manufacturing; Semiconductor device manufacture; Semiconductor diodes; Solid state circuits; Stability; Temperature; Transistors; Vacuum technology; Voice mail;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop. 1994 IEEE/SEMI
Conference_Location
Cambridge, MA
Print_ISBN
0-7803-2053-0
Type
conf
DOI
10.1109/ASMC.1994.588268
Filename
588268
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