Title :
Electrical characterization and conduction mechanism of high-k Ti1−xSixO2 gate dielectrics
Author :
Kim, Chang Eun ; Moon, Pyung ; Cho, Edward Namkyu ; Kim, Sungyeon ; Myoung, Jae-min ; Yun, Ilgu
Author_Institution :
Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
Ti1-xSixO2 dielectric thin films were prepared by co-sputtering deposition at room temperature. Electrical properties of high-k Ti1-xSixO2 dielectric thin film were characterized and the leakage current mechanism was analyzed. As the TiO2 power increases, the dielectric constant is increased from 14 to 43 and the dominant leakage current mechanism is changed from Schottky emission to Poole-Frenkel emission.
Keywords :
MIS structures; Poole-Frenkel effect; Schottky effect; electrical conductivity; high-k dielectric thin films; leakage currents; permittivity; sputtered coatings; titanium compounds; Poole-Frenkel emission; Schottky emission; Ti1-xSixO2; co-sputtering deposition; conduction mechanism; dielectric constant; dielectric thin films; high-k gate dielectrics; leakage current mechanism; temperature 293 K to 298 K; High K dielectric materials; High-K gate dielectrics;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424660
