Title :
Impact of Ge substrate on drain current of Trigate N-FinFET
Author :
Mishra, V.K. ; Chauhan, R.K.
Author_Institution :
Dept. of Electron. & Commun. Eng., Madan Mohan Malaviya Eng. Coll., Gorakhpur, India
Abstract :
In this paper, impact of lightly doped Ge substrate on drain current of Trigate N-FinFET has been investigated. The result obtained was compared with heavily doped Si substrate N-FinFET. The highest peak saturated drain current was found to increased by 25% in input characteristics and 8% in output characteristics. The fin height kept constant, hence without affecting the area consumed. The simulation has been done using VISUAL TCAD.
Keywords :
MOSFET; elemental semiconductors; germanium; semiconductor doping; Ge; VISUAL TCAD; fin height; germanium substrate impact; lightly-doped trigate N-FinFET; peak-saturated drain current; trigate N-FinFET; CMOS integrated circuits; CMOS technology; Doping; FinFETs; Layout; Logic gates; Substrates; FinFET; HfO2; Mobility; Substrate doping; Trigate;
Conference_Titel :
Advances in Computing, Communications and Informatics (ICACCI, 2014 International Conference on
Conference_Location :
New Delhi
Print_ISBN :
978-1-4799-3078-4
DOI :
10.1109/ICACCI.2014.6968402
