DocumentCode :
1660881
Title :
Atomic structure of the Ag/Ge(111)-( √3× √3) surface: from STM observation to theoretical study
Author :
Chou, L.-W. ; Wu, H.C. ; Lee, Y.R. ; Jiang, J.-C. ; Su, C. ; Lin, J.-C.
Author_Institution :
Inst. of Atomic & Mol. Sci., Acad. Sinica, Taipei, Taiwan
fYear :
2010
Firstpage :
658
Lastpage :
659
Abstract :
The atomic structure of the Ag/Ge(111)-( ¿3× ¿3)R30° surface is studied by scanning tunneling microscopy (STM) and the density functional theory (DFT) calculations. Our STM images have shown a structure which is different from the widely accepted honeycomb-chained-triangle (HCT) model before. The structure is similar to the inequivalent triangle (IET) model found for the Ag/Ge(111)-( ¿3× ¿3)R30° surface. This model proposed two types of silver triangles with different sizes in the unit cell, corresponding to the bright spots and the dark spots in the STM image. A distinguishable hexagonal pattern of the IET structure was well disclosed in the temperature range from 100 K to 473 K in our STM studies for Ag/Ge(111)-( ¿3× ¿3)R30°. Furthermore, the result of the density functional theory (DFT) calculations showed that the IET structure is 0.20 eV energetically more stable than the HCT model. Besides, the Ge triangles, which were not disclosed in earlier STM research, are found in this study.
Keywords :
density functional theory; elemental semiconductors; germanium; scanning tunnelling microscopy; silver; surface reconstruction; Ag; Ag/Ge(111)-(¿3Ã\x97¿3) surface; DFT; Ge; IET structure; STM; atomic structure; bright spots; dark spots; density functional theory; honeycomb-chained-triangle model; inequivalent triangle model; scanning tunneling microscopy; temperature 100 K to 473 K; Atomic layer deposition; Chemical engineering; Chemical technology; Density functional theory; Materials science and technology; Organic materials; Polymers; Surface reconstruction; Temperature distribution; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424668
Filename :
5424668
Link To Document :
بازگشت