Title :
Germanium photodetector integrated in a Silicon-On-Insulator microwaveguide
Author :
Vivien, L. ; Rouvière, M. ; Marris-Morini, D. ; Mangeney, J. ; Crozat, P. ; Cassan, E. ; Le Roux, X. ; Laval, S. ; Melhaoui, L. El ; Damlencourt, J-F ; Fédéli, J-M
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. Paris-Sud XI, Orsay
Abstract :
Design, fabrication and characterization of germanium on silicon photodetector integrated in SOI waveguide are reported. A responsivity of 1 A/W and a -3 dB bandwidth of 25 GHz under 6 V bias have been obtained at lambda=1.55 mum.
Keywords :
elemental semiconductors; germanium; integrated optics; metal-semiconductor-metal structures; optical design techniques; optical fabrication; optical waveguides; photodetectors; silicon-on-insulator; Ge-Si; germanium-on-silicon photodetector design; integrated MSM photodetector fabrication; silicon-on-insulator microwaveguide; voltage 6 V; wavelength 1.55 mum; Germanium; Integrated optics; Optical interconnections; Optical microscopy; Optical modulation; Optical waveguide theory; Optical waveguides; Photodetectors; Photonic integrated circuits; Silicon on insulator technology; germanium; integrated optics; microphotonics; photodetector; silicon-on-insulator; waveguide;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347743
