Title :
Comparative analysis of trap-based program/erase behaviors with tunnel dielectric for SONOS flash memory
Author :
Li, Dong Hua ; Kim, Yoon ; Park, Byung-Gook
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
Abstract :
In this study, we comparatively analyze the trap-based memory operation characteristics with tunnel dielectric in Oxide-Nitride-Oxide (ONO) structure. Detailed analysis is focused on the difference between single and bandgap engineered (BE) tunnel dielectric by comparing the program/erase (P/E) and charge retention behaviors. As a result, bandgap engineered tunnel dielectric structure embodies both fast P/E speed and long-term charge retention characteristics which exhibit a possible solution for performance optimization in SONOS flash memory device.
Keywords :
flash memories; random-access storage; SONOS flash memory; bandgap engineering; charge retention; oxide-nitride-oxide structure; trap based program/erase behavior; tunnel dielectric; Charge carrier processes; Dielectric devices; Dielectric substrates; Electron traps; Flash memory; Photonic band gap; SONOS devices; Silicon; Tunneling; Voltage;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424670
