Title :
High Speed Selective-Area-Epitaxial Ge-on-SOI PIN Photo-detector Using Thin Low Temperature Si0.8Ge0.2 Buffer by Ultra-High-Vacuum Chemical Vapor Deposition
Author :
Ter-Hoe, Loh ; Jian, Wang ; Hoai-Son, Nguyen ; Raniana, M. ; Ming-Bin, Yu ; Wei-Yip, Loh ; Guo-Qiang, Lo ; Balasubramanian, Narayanan ; Dim-Lee, Kwong
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
Ge SiGe/SOI PIN photodiodes with 15 - 17 GHz bandwidth at 1550 nm, external quantum efficiency of 20% - 27% 6 at 850 nm, and bulk dark current density of 1.5~2 mA/cm2, using low temperature Si0.8Ge0.2 buffer and without cyclic annealing were demonstrated.
Keywords :
chemical vapour deposition; dark conductivity; germanium; p-i-n photodiodes; photodetectors; silicon compounds; silicon-on-insulator; Ge-SiGe-Si; Ge-on-SOI pin photo-detector; chemical vapor deposition; dark current density; efficiency 20 percent to 27 percent; frequency 15 GHz to 17 GHz; quantum efficiency; wavelength 1550 nm; wavelength 850 nm; Annealing; Chemical vapor deposition; Dark current; Epitaxial growth; Germanium silicon alloys; Molecular beam epitaxial growth; PIN photodiodes; Plasma temperature; Silicon germanium; Substrates;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347744
