Title :
High Speed Selective-Area-Epitaxial Ge-on-SOI PIN Photo-detector Using Thin Low Temperature Si0.8Ge0.2 Buffer by Ultra-High-Vacuum Chemical Vapor Deposition
Author :
Ter-Hoe, Loh ; Jian, Wang ; Hoai-Son, Nguyen ; Ramana, Murthy ; Ming-Bin, Yu ; Wei-Yip, Loh ; Guo-Qiang, Lo ; Balasubramanian, Narayanan ; Dim-Lee, Kwong
Author_Institution :
Institute of Microelectronics, 11 Science Park Rd, Science Park-II, Singapore (117685)
Abstract :
Ge/SiGe/SOI PIN photodiodes with 15~17GHz bandwidth at 1550nm, external quantum efficiency of 20%~27% at 850nm, and bulk dark current density of 1.5~2mA/cm2, using low temperature Si0.8Ge0.2 buffer and without cyclic annealing were demonstrated.
Keywords :
Annealing; Chemical vapor deposition; Dark current; Epitaxial growth; Germanium silicon alloys; Molecular beam epitaxial growth; PIN photodiodes; Plasma temperature; Silicon germanium; Substrates;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347745
