• DocumentCode
    1661019
  • Title

    Ge/Si avalanche photodiodes for 1.3μm optical fiber links

  • Author

    Kang, Yimin ; Litski, Stas ; Sarid, Gadi ; Morse, Mike ; Paniccia, Mario J. ; Pauchard, Alexandre ; Gan, Kian Giap ; Bowers, John E.

  • Author_Institution
    Intel Corp., Santa Clara, CA
  • fYear
    2007
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We demonstrate the epitaxially-grown Ge/Si avalanche photodiodes with a responsivity at 1310 nm of 0.52 A/W, a breakdown thermal coefficient of 0.07%/°C, a 3 dB-bandwidth of 7 GHz and a dark current density of 2.75 mA/cm2 at unity gain.
  • Keywords
    avalanche photodiodes; dark conductivity; elemental semiconductors; germanium; optical communication equipment; optical fibre communication; optical links; silicon; Ge-Si; breakdown thermal coefficient; dark current density; epitaxially-grown avalanche photodiodes; frequency 7 GHz; optical fiber links; wavelength 1310 nm; Absorption; Avalanche breakdown; Avalanche photodiodes; Bandwidth; Dark current; Optical fibers; Parasitic capacitance; Semiconductor materials; Temperature; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2007 4th IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-0934-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2007.4347746
  • Filename
    4347746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1661019