DocumentCode
1661101
Title
A study on the simple structural phosphorescent organic light-emitting diodes
Author
Kim, Min ; Seo, Ji Hyun ; Choi, Eun Young ; Kim, Jun Ho ; Lee, Kum Hee ; Kim, Seul Ong ; Yoon, Seung Soo ; Kim, Young Kwan
Author_Institution
Dept. of Chem., Sungkyunkwan Univ., Suwon, South Korea
fYear
2010
Firstpage
652
Lastpage
653
Abstract
The recombination dynamic of hole and electron and carrier transport mechanism were studied. We demonstrated a efficient green phosphorescent organic light-emitting diodes (OLEDs) as the doping concentration are varied without hole blocking layer (HBL) and electron transport layer (ETL). In spite of device without HBL and ETL, it is possible to inject the electron from the cathode into the emission layer (EML). It is practicable under the high doping ratio of the dopant in host. The high concentrated doping leads to the direct injection of hole and electron from both electrodes into iridium(III) tris(2-phenylpyridine) [Ir(ppy)3] used as dopant because the workfunction of Al and the highest occupied molecular orbital (HOMO) state of 4,4´-bis[N-(naphthyl)-N-phenyl-amino]biphenyl 4,4´-bis[N-(naphthyl)-N-phenyl-amino]biphenyl (NPB) are nearly aligned with the lowest unoccupied molecular orbital (LUMO) and HOMO energy state of Ir(ppy)3, respectively.
Keywords
doping profiles; electron transport theory; organic light emitting diodes; organic semiconductors; phosphorescence; semiconductor doping; HOMO state; LUMO energy state; carrier transport mechanism; direct electron injection; direct hole injection; doping concentration; doping ratio; electrodes; electron transport layer; electron transport mechanism; emission layer; green phosphorescent organic light-emitting diodes; highest occupied molecular orbital; hole blocking layer; hole transport mechanism; iridium(III) tris(2-phenylpyridine); lowest unoccupied molecular orbital; Anodes; Cathodes; Charge carrier processes; Doping; Electron emission; Flat panel displays; Indium tin oxide; Organic light emitting diodes; Phosphorescence; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424677
Filename
5424677
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