Title :
Structural, optical, and electrical properties of silicon nanowires for solar cells
Author :
Stelzner, Thomas ; Sivakov, Vladimir A. ; Berger, Andreas ; Hoffmann, Björn ; De Wolf, Stefaan ; Ballif, Christophe ; Zhang, Dongfeng ; Michler, Johann ; Christiansen, Silke H.
Author_Institution :
Inst. of Photonic Technol., Jena, Germany
Abstract :
We investigated Si nanowires (SiNWs) fabricated by wet etching and chemical vapor deposition (CVD), and core-shell structures, formed by depositing silicon layers around the SiNWs, with respect to their crystallinity, the doping level, and the influence of surface passivation on carrier lifetime. The effects expected to be critical to improve the performance of nanowire-based solar cells are discussed.
Keywords :
carrier lifetime; chemical vapour deposition; elemental semiconductors; etching; nanofabrication; nanowires; passivation; semiconductor doping; semiconductor growth; silicon; solar cells; CVD; Si; carrier lifetime; chemical vapor deposition; core-shell structure; crystallinity; doping level; electrical properties; optical properties; silicon nanowires; solar cells; surface passivation; wet etching; Charge carrier lifetime; Crystallization; Etching; Gold; Nanowires; P-n junctions; Passivation; Photovoltaic cells; Silicon; Wires;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424682
