Structural, optical, and electrical properties of silicon nanowires for solar cells

Author

Stelzner, Thomas ; Sivakov, Vladimir A. ; Berger, Andreas ; Hoffmann, Björn ; De Wolf, Stefaan ; Ballif, Christophe ; Zhang, Dongfeng ; Michler, Johann ; Christiansen, Silke H.

Author_Institution

Inst. of Photonic Technol., Jena, Germany

fYear

2010

Firstpage

275

Lastpage

276

Abstract

We investigated Si nanowires (SiNWs) fabricated by wet etching and chemical vapor deposition (CVD), and core-shell structures, formed by depositing silicon layers around the SiNWs, with respect to their crystallinity, the doping level, and the influence of surface passivation on carrier lifetime. The effects expected to be critical to improve the performance of nanowire-based solar cells are discussed.

Keywords

carrier lifetime; chemical vapour deposition; elemental semiconductors; etching; nanofabrication; nanowires; passivation; semiconductor doping; semiconductor growth; silicon; solar cells; CVD; Si; carrier lifetime; chemical vapor deposition; core-shell structure; crystallinity; doping level; electrical properties; optical properties; silicon nanowires; solar cells; surface passivation; wet etching; Charge carrier lifetime; Crystallization; Etching; Gold; Nanowires; P-n junctions; Passivation; Photovoltaic cells; Silicon; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424682

Filename

5424682