DocumentCode :
1661310
Title :
Construction and operation of sub-10 nm vertical molecular transistors
Author :
Mentovich, Elad ; Richter, Shachar
Author_Institution :
Tel Aviv Univ., Tel Aviv, Israel
fYear :
2010
Firstpage :
646
Lastpage :
647
Abstract :
We present a novel type of nano device: the sub-10 nm vertical molecular transistor. This device can be fabricated using conventional lithographic methods and in mass production. We use this transistor to explore the transport mechanism of various molecular systems such molecular quantum dots and doped proteins.
Keywords :
biomolecular electronics; biotransport; fullerene compounds; fullerene devices; molecular biophysics; nanoelectronics; nanofabrication; nanolithography; proteins; quantum dots; transistors; C60 doped BSA; carboxyl fullerene; doped protein; ferrocene derivative; lithographic method; molecular quantum dots; molecular systems; nanodevice; transport mechanism; vertical molecular transistor; Dielectric substrates; Electrodes; Electronic components; Gold; Low voltage; Mass production; Proteins; Quantum dots; Silicon; Titanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424686
Filename :
5424686
Link To Document :
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