Title :
Research on the photoelectric characteristics of a double barrier structure with quantum dots-quantum well inserted in central well
Author :
Zhu, Shengwei ; Han, Jianqiang ; Fan, Lang ; Xiong, Dayuan ; Guo, Fangmin
Author_Institution :
Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China
Abstract :
This paper studies the photoelectric characteristics of a double barrier structure with quantum dots (QD)-quantum well (QW) inserted in central well. It has been shown that the current response of this device is closely bound up with optical intensity and the temperature. Based on a professional simulation tool Crosslight APSYS, after analyzing the device´s band diagram and its response of photonic memory effect in I-V characteristic (300k) and C-V characteristic(300k), it has been shown that the current response of this device is closely bound up with optical intensity and the illumination time. Based on a professional simulation tool Crosslight APSYS and the testing software Keithley, we can try to establish small-signal models of the device with the experimental datas in order to understand and apply.
Keywords :
semiconductor quantum dots; semiconductor quantum wells; C-V characteristic; Crosslight APSYS; I-V characteristic; Keithley; band diagram; central well; current response; double barrier structure; illumination time; optical intensity; photoelectric characteristics; photonic memory effect; professional simulation tool; quantum dots-quantum well; small-signal models; testing software; Capacitance-voltage characteristics; Gallium arsenide; Infrared detectors; Lighting; Optical buffering; Optical devices; Optical sensors; Photoconductivity; Quantum dot lasers; Quantum dots;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424688
