CMOS microsystem front-end for microtesla resolution magnetic field measurement

Author

Frick, VIncent ; Hebrard, Luc ; Poure, Philippe ; Braun, Francis

Author_Institution

LEPSI, Univ. Louis Pasteur, Strasbourg, France

Volume

1

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

129

Abstract

In this paper, we discuss the conception and performances of a monolithic microsystem for magnetic field measurement built in standard 0.6 μm CMOS technology. It is shown that 5.2 microtesla resolution over 1 kHz bandwidth (5 to 1 kHz) can be achieved by combining a smart Hall effect based sensing device and appropriate analog conditioning electronics. The study focuses on the methods used to drive up the sensor sensitivity and to drive down the system noise level in order to achieve the stated resolution. New circuitry is proposed for sensor biasing

Keywords

CMOS integrated circuits; Hall effect devices; analogue processing circuits; electric sensing devices; intelligent sensors; magnetic field measurement; magnetic sensors; microsensors; signal resolution; 0.6 micron; 1 kHz; 5.2 muT; CMOS microsystem front-end; CMOS technology; analog conditioning electronics; bandwidth; magnetic field measurement; measurement resolution; microtesla resolution magnetic field measurement; monolithic microsystem; sensor biasing circuitry; sensor sensitivity; smart Hall effect based sensing device; system noise level; Bandwidth; CMOS technology; Hall effect; Intelligent sensors; Magnetic field measurement; Magnetic fields; Measurement standards; Noise level; Performance evaluation; Sensor systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on

Print_ISBN

0-7803-7057-0

Type

conf

DOI

10.1109/ICECS.2001.957695

Filename

957695