Title :
Study on the performance of nano-optoelectronics device: InGaAs/GaAs VLW-QWIP
Author :
Xiong, D.Y. ; Guo, F.M. ; Zhang, W.E.
Author_Institution :
Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China
Abstract :
This work study on the performance characteristics of one kind of nano-optoelectronics device: InGaAs/GaAs very-long-wavelength quantum well infrared photodetector (VLW-QWIP). Based on a professional simulation tool Crosslight APSYS, we have determined the energy band, dark current spectra as well as those of the traditional AlGaAs/GaAs VLW-QWIPs under device operation temperature of 55 K. Larger responsivity and detectivity have been obtained from InGaAs/GaAs VLW-QWIPs due to its higher photoconductive gain and quantum efficiency, offering guidance for nano-optoelectronics device material choosing and optimization.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; optimisation; optoelectronic devices; photodetectors; quantum well devices; Crosslight APSYS; InGaAs-GaAs; VLW-QWIP; dark current spectra; energy band; nano-optoelectronics device; optimization; photoconductive gain; quantum efficiency; temperature 55 K; very-long-wavelength quantum well infrared photodetector; Absorption; Dark current; Gallium arsenide; Indium gallium arsenide; Infrared detectors; Nanoscale devices; Photoconducting materials; Photodetectors; Quantum well lasers; Temperature;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424691
