DocumentCode :
1661451
Title :
Preparation of nanostructures thermoelectric materials using PLA technique
Author :
Kumpeerapun, T. ; Hirunlabh, J. ; Khedari, J. ; Scherrer, H. ; Kosalathip, V. ; Phangream, W. ; Limsuwan, P.
Author_Institution :
Fac. of Energy, Environ. & Mater., King Mongkut´´s Univ. of Technol. Thonburi, Bangkok, Thailand
fYear :
2010
Firstpage :
643
Lastpage :
643
Abstract :
We present experimental investigation of synthesis nanostructures of p-type Bi0.6Sb1.4Te3 thermoelectric materials. These semiconductor materials are the best convention thermoelectric materials for use near room temperature. A new synthesis method of nanopowder using the laser ablation on high speed moving target and long laser pulse has been used and carried out in an argon atmospheric pressure. The comparison between nanoparticles obtained from hot pressing process targets and low cost cold pressing process targets have been studied. The nanostructures have been characterized by X-ray diffraction, scanning electron microscope and transmission electron microscope.
Keywords :
X-ray diffraction; antimony compounds; bismuth compounds; hot pressing; laser ablation; nanoparticles; scanning electron microscopes; semiconductor materials; thermoelectricity; transmission electron microscopes; Bi0.6Sb1.4Te3; PLA technique; X-ray diffraction; argon atmospheric pressure; cold pressing; hot pressing; laser ablation; laser pulse; nanopowder; nanostructures thermoelectric materials; p-type thermoelectric materials; scanning electron microscope; semiconductor materials; temperature 293 K to 298 K; transmission electron microscope; Laser ablation; Nanostructured materials; Optical materials; Pressing; Programmable logic arrays; Semiconductor lasers; Semiconductor materials; Semiconductor nanostructures; Thermoelectricity; X-ray lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424692
Filename :
5424692
Link To Document :
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