• DocumentCode
    1661451
  • Title

    Preparation of nanostructures thermoelectric materials using PLA technique

  • Author

    Kumpeerapun, T. ; Hirunlabh, J. ; Khedari, J. ; Scherrer, H. ; Kosalathip, V. ; Phangream, W. ; Limsuwan, P.

  • Author_Institution
    Fac. of Energy, Environ. & Mater., King Mongkut´´s Univ. of Technol. Thonburi, Bangkok, Thailand
  • fYear
    2010
  • Firstpage
    643
  • Lastpage
    643
  • Abstract
    We present experimental investigation of synthesis nanostructures of p-type Bi0.6Sb1.4Te3 thermoelectric materials. These semiconductor materials are the best convention thermoelectric materials for use near room temperature. A new synthesis method of nanopowder using the laser ablation on high speed moving target and long laser pulse has been used and carried out in an argon atmospheric pressure. The comparison between nanoparticles obtained from hot pressing process targets and low cost cold pressing process targets have been studied. The nanostructures have been characterized by X-ray diffraction, scanning electron microscope and transmission electron microscope.
  • Keywords
    X-ray diffraction; antimony compounds; bismuth compounds; hot pressing; laser ablation; nanoparticles; scanning electron microscopes; semiconductor materials; thermoelectricity; transmission electron microscopes; Bi0.6Sb1.4Te3; PLA technique; X-ray diffraction; argon atmospheric pressure; cold pressing; hot pressing; laser ablation; laser pulse; nanopowder; nanostructures thermoelectric materials; p-type thermoelectric materials; scanning electron microscope; semiconductor materials; temperature 293 K to 298 K; transmission electron microscope; Laser ablation; Nanostructured materials; Optical materials; Pressing; Programmable logic arrays; Semiconductor lasers; Semiconductor materials; Semiconductor nanostructures; Thermoelectricity; X-ray lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424692
  • Filename
    5424692