DocumentCode :
1661464
Title :
Photoconductive characteristic in individual tungsten oxide nanowire
Author :
Gong, Li ; Chen, Shanghui ; Zhang, Weihong ; Shanghui Chen ; Xie, Fangyan
Author_Institution :
Instrum. Anal. & Res. Center, Sun Yat-sen Univ., Guangzhou, China
fYear :
2010
Firstpage :
289
Lastpage :
290
Abstract :
In this paper, we show the photoconductivity from the device composed by a single tungsten oxide nanowire (WO3-x NW) and the silver paint. At the photoconductivity testing system , the photoconductivity and the Raman spectra of the sample could be obtained in-situ. The experiments revealed strong out-put photopower and optoelectrics responsivity from the device consisting of individual tungsten oxide nanowire. One of the most intriguing aspects of these experiments was the dependence of the photoconductivity on the illumination position in the sample. Further, the mechanism of the photocurrent generation could be concluded as the oxygen defect at the surface of WO3-x NW and the Schottky barrier at the WO3-x NW and silver paint contacts. All these effects could be of practical use in the design and fabrication of photodetectors based on single tungsten oxide nanowire.
Keywords :
Raman spectra; Schottky barriers; nanowires; photoconductivity; photodetectors; photoemission; tungsten compounds; Raman spectra; Schottky barrier; WO3-x; illumination position; optoelectrics responsivity; oxygen defect; photoconductivity; photocurrent generation; photodetectors; photopower; silver paint contacts; single tungsten oxide nanowire; Fabrication; Lighting; Nanoscale devices; Paints; Photoconductivity; Photodetectors; Schottky barriers; Silver; System testing; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424693
Filename :
5424693
Link To Document :
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