Title :
Preparation of SnO2 nanowires by solvent-free method using mesoporous silica template and its gas sensitive properties
Author :
Zhang, Haijiao ; Tan, Zhijin ; Wu, Ruofei ; Zhang, Chunlei ; Shi, Wenming ; Jiao, Zheng
Author_Institution :
Inst. of Nanochemistry & Nanobiology, Shanghai Univ., Shanghai, China
Abstract :
In this paper we present a simple and facile method to synthesize tin dioxide (SnO2) nanowires by solvent-free infiltration method using SnCl2·2H2O as precursor and mesoporous silica SBA-15 as hard template. No solvent were used during the processing. The products were characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM) and N2 adsorption/desorption isotherms. The results indicated that SnO2 nanowires fabricated by this method have a diameter of about 8 nm and a relatively high surface area 73 m2/g. The gas sensitive properties of SnO2 nanowires were measured. Compared with bulk SnO2, SnO2 nanowires showed much higher response to toluene.
Keywords :
X-ray diffraction; adsorption; desorption; gas sensors; nanofabrication; nanowires; nitrogen; semiconductor growth; semiconductor materials; semiconductor quantum wires; tin compounds; transmission electron microscopy; N2; SnO2; X-ray powder diffraction; adsorption; desorption; gas sensitive properties; mesoporous silica template; nanowires; solvent-free infiltration; transmission electron microscopy; Gas detectors; Mesoporous materials; Nanowires; Plastic products; Powders; Silicon compounds; Surface morphology; Tin; X-ray diffraction; X-ray scattering;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424710
