Title :
Indirectly pumped THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy
Author :
Yamanishi, Masamichi ; Fujita, Kazuue ; Furuta, Shinichi ; Edamura, Tadataka ; Tanaka, Kazunori
Author_Institution :
Central Res. Labs., Hamamatsu Photonics KK, Hamamatsu, Japan
Abstract :
We present the operation of indirectly pumped InGaAs/InAlAs THz quantum-cascade lasers of which active/injector structures were grown by MOVPE. A laser exhibits a low threshold-current-density of ~560 A/cm2 at 7 K and a Tmax~84 K.
Keywords :
MOCVD; aluminium compounds; current density; gallium arsenide; indium compounds; infrared sources; optical pumping; quantum cascade lasers; semiconductor growth; terahertz wave devices; vapour phase epitaxial growth; InGaAs-InAlAs; MOVPE; THz quantum-cascade lasers; active-injector structures; metal-organic vapor-phase epitaxy; temperature 7 K; threshold-current-density; Indium gallium arsenide; Laser excitation; Pump lasers; Quantum cascade lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
