DocumentCode
1662122
Title
Terahertz quantum cascade lasers with symmetric active regions
Author
Deutsch, C. ; Detz, H. ; Zederbauer, T. ; Andrews, A.M. ; Schrenk, W. ; Benz, A. ; Strasser, G. ; Unterrainer, K.
Author_Institution
Photonics Inst., Vienna Univ. of Technol., Vienna, Austria
fYear
2012
Firstpage
1
Lastpage
2
Abstract
We present terahertz quantum cascade lasers based on symmetric active regions. Polarity dependent performance differences are observed in the GaAs/AlGaAs and the InGaAs/GaAsSb system. The growth-induced asymmetries and their influence are discussed.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; microwave photonics; quantum cascade lasers; terahertz wave devices; GaAs-AlGaAs; InGaAs-GaAsSb; growth-induced asymmetries; polarity dependent performance; symmetric active regions; terahertz quantum cascade lasers; Gallium arsenide; Indium gallium arsenide; Performance evaluation; Quantum cascade lasers; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6325970
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