Title :
Strategic Considerations for Unipolar SiC Switch Options: JFET vs. MOSFET
Author :
Treu, M. ; Rupp, R. ; Blaschitz, P. ; Rüschenschmidt, K. ; Sekinger, Th ; Friedrichs, P. ; Elpelt, R. ; Peters, D.
Author_Institution :
Infineon Technol. AG, Villach
Abstract :
This paper compares the two most prominent alternatives of an upcoming commercial SiC power switch: JFET vs. MOSFET. Besides the lower specific Ron achievable with a SiC-JFET according to today´s technological progress, also reliability and long term stability concerns give advantage to the JFET concept. The major drawback of the JFET, its normally on characteristic, can easily be overcome by a cascade configuration together with a fast low voltage power MOSFET. In some applications the self conducting characteristic is even beneficial.
Keywords :
field effect transistor switches; junction gate field effect transistors; power MOSFET; silicon compounds; JFET; junction gate field effect transistors; low voltage power MOSFET; unipolar silicon carbide switch; Electrodes; MOSFET circuits; Power MOSFET; Power conversion; Power semiconductor switches; Silicon carbide; Stability; Switched-mode power supply; Switching loss; Voltage;
Conference_Titel :
Industry Applications Conference, 2007. 42nd IAS Annual Meeting. Conference Record of the 2007 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-1259-4
Electronic_ISBN :
0197-2618
DOI :
10.1109/07IAS.2007.10
