Title :
Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems
Author :
Zhao, Tiefu ; Wang, Jun ; Huang, Alex Q. ; Agarwal, Anant
Author_Institution :
North Carolina State Univ., Raleigh
Abstract :
With the rapid development of silicon carbide (SiC) material quality, SiC power devices are gaining tremendous attentions in power electronics. In this paper, a SiC device based motor drive system is performed to provide a quantitative estimate of the system improvement. Two 60 kW motor drive systems based on SiC MOSFET/Schottky diode and Si IGBTs are designed. The power losses of the two inverters with sinusoidal pulse width modulation (SPWM) control are calculated analytically. By comparing the efficiencies, sizes and temperatures of the two designed systems, SiC device shows the superior advantages of smaller loss, better efficiency and smaller size in the same motor drive application.
Keywords :
PWM invertors; motor drives; power MOSFET; power semiconductor diodes; silicon compounds; wide band gap semiconductors; SPWM control; Schottky diode; Si IGBT based motor drive systems; SiC; SiC MOSFET based motor drive systems; SiC power devices; inverters; power 60 kW; power losses; sinusoidal pulse width modulation control; Insulated gate bipolar transistors; MOSFET circuits; Motor drives; Power MOSFET; Power electronics; Pulse inverters; Pulse width modulation inverters; Schottky diodes; Silicon carbide; Temperature;
Conference_Titel :
Industry Applications Conference, 2007. 42nd IAS Annual Meeting. Conference Record of the 2007 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-1259-4
Electronic_ISBN :
0197-2618
DOI :
10.1109/07IAS.2007.51
