Title :
N-type conductivity in oxygen ion implanted nanocrystalline diamond films
Author :
Hu, X.J. ; Liu, H.J. ; Pan, J.P. ; Lu, L.P.
Author_Institution :
Coll. of Chem. Eng. & Mater. Sci., Zhejiang Univ. of Technol., Hangzhou, China
Abstract :
Nanocrystalline diamond films were implanted by oxygen ion and annealed under different temperatures. The results show that the oxygen ion implanted nanocrystalline diamond films exhibit n-type conductivity when the annealing temperature is above 800°C. The annealing stimulates the electrical activation of oxygen ion implanted diamond grains and grain boundaries. The origin of n-type conductivity and related mechanisms are discussed.
Keywords :
annealing; diamond; grain boundaries; ion implantation; nanostructured materials; C:O; annealing temperature; electrical activation; grain boundaries; n-type conductivity; nanocrystalline diamond films; oxygen ion implantion; Amorphous materials; Annealing; Chemical vapor deposition; Conductive films; Conductivity; Diamond-like carbon; Grain boundaries; Hall effect; Nitrogen; Temperature;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424728
