Title :
Suppression of random-dopant-induced characteristic fluctuation in 16 nm MOSFET devices using dual-material gate
Author :
Yiu, Chun-Yen ; Ciou, Yong-Yue ; Chang, Ru-Wei ; Lee, Kuo-Fu ; Cheng, Hui-Wen ; Li, Yiming
Author_Institution :
Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this work, we for the first time explore the dual material gate (DMG) and inverse DMG devices for suppressing random dopant fluctuation (RDF)-induced characteristics fluctuation in 16-nm MOSFET devices. The physical mechanism of DMG devices to suppress RDF are investigated and discussed. The improvement of DMG for suppressing the RDF-induced Vth, Ion, and Ioff fluctuation are 28%, 12.3%, and 59%, respectively.
Keywords :
MOSFET; nanoelectronics; MOSFET devices; dual material gate; dual-material gate; inverse DMG devices; random dopant fluctuation-induced characteristic fluctuation; random-dopant-induced characteristic fluctuation suppression; size 16 nm; Performance evaluation; Tin; Variable speed drives; Dual material gate; Potential barriers; Random dopant fluctuatio; Work function;
Conference_Titel :
Next-Generation Electronics (ISNE), 2010 International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4244-6693-1
DOI :
10.1109/ISNE.2010.5669139
