Title :
λ-Size silicon modulator
Author :
Sorger, V.J. ; Lanzillotti-Kimura, N.D. ; Ma, R.-M. ; Zhang, X.
Author_Institution :
NSF Nanosci. & Eng., Univ. of California, Berkeley, CA, USA
Abstract :
We report an experimental demonstration of a 3X-size, silicon waveguide-integrated electro-optic modulator with a record high extinction ratio exceeding 1dB/μm, extremely low insertion loss (-1dB) in the ON-state, and an ultra-broadband (>;0.5μm) bandwidth based on free-carrier switching in ITO.
Keywords :
electro-optical modulation; elemental semiconductors; indium compounds; integrated optics; optical losses; optical waveguides; silicon; λ-size silicon modulator; ITO; extinction ratio; free-carrier switching; insertion loss; silicon waveguide-integrated electro-optic modulator; ultrabroadband bandwidth; Indium tin oxide; Optical imaging; Optical modulation; Optical refraction; Optical resonators; Optical waveguides;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
