The Dual GCT - A New High-Power Device Using Optimized GCT Technology

Author

Kollensperger, P. ; Bragard, Michael ; Plum, Thomas ; De Doncker, Rik W.

Author_Institution

RWTH Aachen Univ., Aachen

fYear

2007

Firstpage

358

Lastpage

365

Abstract

The performance of high-power inverters is determined strongly by the characteristics of the semiconductor devices. The design of suitable devices is always a compromise between on-state losses and switching losses. In this paper, a new device - the Dual GCT - is proposed that combines the advantages of differently optimized gate commutated thyristors (GCTs) and realizes low conduction and low switching losses in a single semiconductor device. The concept is introduced first, before the analytical design is presented. Next, FEM simulations are employed to extent the investigation to devices that are not yet available. Measurements of a hybrid Dual GCT are added to verify the advantages of the concept. Finally, the results are discussed.

Keywords

finite element analysis; thyristors; FEM simulation; dual gate commutated thyristors; high-power device; high-power inverter; low conduction loss; low-switching losses; Frequency; Insulated gate bipolar transistors; Inverters; MOSFET circuits; Packaging; Performance loss; Semiconductor devices; Switching loss; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2007. 42nd IAS Annual Meeting. Conference Record of the 2007 IEEE

Conference_Location

New Orleans, LA

ISSN

0197-2618

Print_ISBN

978-1-4244-1259-4

Electronic_ISBN

0197-2618

Type

conf

DOI

10.1109/07IAS.2007.76

Filename

4347810