Title :
Optical and electrical properties of silicon nanoparticles
Author :
Gupta, Anoop ; Hartner, Sonja ; Wiggers, Hartmut
Author_Institution :
Inst. for Combustion & Gasdynamics (IVG), Univ. of Duisburg-Essen, Duisburg, Germany
Abstract :
For the fabrication of optoelectronic devices based on silicon nanoparticles (Si-NPs), it is very important to understand their optical and electrical behavior. In this paper, we present the optical and electrical properties of Si-NPs. We demonstrate that the optical properties of Si-NPs depend on their size as well as their surface chemistry. The size of Si-NPs was finely tuned by etching them in a mixture of hydrofluoric acid (HF) and nitric acid (HNO3) for different times. The resulting Si- NPs exhibit bright luminescence across the visible spectrum. In order to stabilize the optical emission, the surface of freshly etched Si-NPs was successfully functionalized with organic molecules.As the surface chemistry is also expected to strongly influence the electrical transport between Si-NPs and therefore the electrical properties of Si-NP ensembles, the conductivity of pellets consisting of Si-NPs was measured using impedance spectroscopy. The surface oxide of Si-NPs was removed by etching them with HF acid. The freshly etched Si-NPs showed much higher conductivity compared to as-prepared samples. The surface functionalization of freshly etched Si-NPs slightly decreases their conductivity. However, it was observed that the conductivity was still much higher compared to as-prepared samples.
Keywords :
electric properties; elemental semiconductors; hydrogen compounds; luminescence; nanoparticles; optical properties; optoelectronic devices; silicon; surface chemistry; HCl; HF; Si; bright luminescence; electrical properties; etching; hydrofluoric acid; impedance spectroscopy; nitric acid; optical emission; optical properties; optoelectronic devices; silicon nanoparticles; surface chemistry; surface functionalization; Chemistry; Conductivity; Etching; Hafnium; Luminescence; Nanoparticles; Optical device fabrication; Optical devices; Optoelectronic devices; Silicon;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424734