• DocumentCode
    1662532
  • Title

    Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages

  • Author

    Bergogne, Dominique ; Hammoud, Asif ; Tournier, Dominique ; Buttay, Cyril ; Amieh, Youness ; Bevilacqua, Pascal ; Zaoui, Abderahime ; Morel, Hervé ; Allard, Bruno

  • Author_Institution
    Lab. Ampere, INSA de Lyon, Villeurbanne, France
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    JFET are experimentally stressed to provide data for modelling, inverter and driver design. The experimental set-up is described. A surge generator is built and a SiC JFET is stressed. During the stress, a temperature estimation is done at increasing time steps, in order to obtain the full thermal response versus time.
  • Keywords
    invertors; junction gate field effect transistors; silicon compounds; JFET; SiC; driver design; electrothermal behaviour; inverter design; lightning-induced overvoltages; temperature estimation; Driver circuits; Electromagnetic compatibility; Inverters; JFET circuits; Lightning; Silicon carbide; Surge protection; Temperature; Thermal stresses; Voltage; JFET; Silicon Carbide; Voltage Source Converter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
  • Conference_Location
    Barcelona
  • Print_ISBN
    978-1-4244-4432-8
  • Electronic_ISBN
    978-90-75815-13-9
  • Type

    conf

  • Filename
    5278812
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1662532