Title :
40Gbps optical receiver based on Germanium waveguide photodetector hybrid-integrated with 90nm CMOS amplifier
Author :
Pan, Huapu ; Assefa, Solomon ; Green, William M J ; Kuchta, Daniel M. ; Schow, Clint L. ; Rylyakov, Alexander V. ; Lee, Benjamin G. ; Baks, Christian W. ; Shank, Steven M. ; Vlasov, Yurii A.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A receiver based on Ge waveguide photodetector wire-bonded to 90nm CMOS amplifier built in specialty SOI wafer demonstrates error-free operation up to 40Gbps. At 25Gbps the receiver achieved a sensitivity of -8.3dBm with 3.3pJ/bit power-efficiency.
Keywords :
CMOS integrated circuits; elemental semiconductors; germanium; integrated optoelectronics; lead bonding; operational amplifiers; optical receivers; optical waveguides; photodetectors; silicon-on-insulator; CMOS amplifier; Ge; SOI wafer; Si; bit rate 25 Gbit/s; bit rate 40 Gbit/s; error-free operation; hybrid-integrated germanium waveguide photodetector; optical receiver; power-efficiency; size 90 nm; wire-bonding; CMOS integrated circuits; Optical fiber amplifiers; Optical receivers; Photodetectors; Sensitivity;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
