On-line junction temperature measurement of IGBTs based on temperature sensitive electrical parameters

Author

Kuhn, Harald ; Mertens, Axel

Author_Institution

Inst. for Drive Syst. & Power Electron. (IAL), Leibniz Univ. Hannover, Hannover, Germany

fYear

2009

Firstpage

1

Lastpage

10

Abstract

This paper deals with a method to derive the junction temperature of an IGBT while the device is in operation. In order to achieve this the gate-emitter voltage, the collector current and the collector-emitter voltage are digitized on the driver board. Due to the fact that material parameters vary with temperature, the waveforms of the switching transients vary with temperature, too. Thus, there is a correlation between the temperature and the switching waveforms. Evaluating temperature sensitive electrical parameters (TSEP), the working temperature of the device can be estimated.

Keywords

insulated gate bipolar transistors; temperature measurement; IGBT; collector current; collector-emitter voltage; driver board; gate-emitter voltage; on-line junction temperature measurement; switching transients; switching waveforms; temperature sensitive electrical parameters; Charge carrier density; Charge carrier processes; Electric variables measurement; Electron mobility; Insulated gate bipolar transistors; Silicon devices; Temperature dependence; Temperature measurement; Temperature sensors; Voltage control; Discrete power device; High power discrete device; IGBT; MOS controlled device; Measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2009. EPE '09. 13th European Conference on

Conference_Location

Barcelona

Print_ISBN

978-1-4244-4432-8

Electronic_ISBN

978-90-75815-13-9

Type

conf

Filename

5278815