Title :
On-line junction temperature measurement of IGBTs based on temperature sensitive electrical parameters
Author :
Kuhn, Harald ; Mertens, Axel
Author_Institution :
Inst. for Drive Syst. & Power Electron. (IAL), Leibniz Univ. Hannover, Hannover, Germany
Abstract :
This paper deals with a method to derive the junction temperature of an IGBT while the device is in operation. In order to achieve this the gate-emitter voltage, the collector current and the collector-emitter voltage are digitized on the driver board. Due to the fact that material parameters vary with temperature, the waveforms of the switching transients vary with temperature, too. Thus, there is a correlation between the temperature and the switching waveforms. Evaluating temperature sensitive electrical parameters (TSEP), the working temperature of the device can be estimated.
Keywords :
insulated gate bipolar transistors; temperature measurement; IGBT; collector current; collector-emitter voltage; driver board; gate-emitter voltage; on-line junction temperature measurement; switching transients; switching waveforms; temperature sensitive electrical parameters; Charge carrier density; Charge carrier processes; Electric variables measurement; Electron mobility; Insulated gate bipolar transistors; Silicon devices; Temperature dependence; Temperature measurement; Temperature sensors; Voltage control; Discrete power device; High power discrete device; IGBT; MOS controlled device; Measurement;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
