Design of polysilicon TFT operational amplifier for analog TFT AMLCD driver

Author

Yiu, Chun Lai ; Mok, Philip K T

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, China

Volume

1

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

317

Abstract

Poly-crystalline silicon (poly-Si) thin film transistor (TFT) technology is very suitable for driving active matrix LCD panel as the driver circuit and the panel can be integrated on the the same substrate. However, the large variation of threshold voltage of poly-Si TFT across the wafer makes it difficult to obtain amplifiers with constant gain and phase margin. An operational amplifier with characteristics independent of threshold voltage variation is presented in this paper. In HSpice simulation with threshold voltage varying from 2 V to 4 V, gain variations were reduced from 50% to 3% and phase margin variations were reduced from 10° to 0.37° in the proposed amplifier

Keywords

SPICE; circuit CAD; compensation; digital simulation; driver circuits; elemental semiconductors; flat panel displays; liquid crystal displays; operational amplifiers; silicon; thin film transistors; 2 to 4 V; AMLCD driver; HSpice simulation; Si; constant gain; constant phase margin; driver circuit; gain variations; operational amplifier; panel; phase margin variations; polysilicon TFT; threshold voltage; Active matrix liquid crystal displays; Active matrix technology; Capacitors; Driver circuits; Integrated circuit technology; Liquid crystal displays; Operational amplifiers; Substrates; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on

Print_ISBN

0-7803-7057-0

Type

conf

DOI

10.1109/ICECS.2001.957743

Filename

957743