• DocumentCode
    1662637
  • Title

    Kinetic Study of Promoted SNCR Process by Different Gas Additives

  • Author

    Cao Qing-xi ; Liu Hui ; Wu Shao-hua ; Zhao Li-Ping ; Huang Xia

  • Author_Institution
    Inst. of Combustion Eng., Harbin Inst. of Technol., Harbin
  • fYear
    2008
  • Firstpage
    4034
  • Lastpage
    4038
  • Abstract
    A detailed chemical kinetic model for promoted SNCR process by H2, CO and CH4 was developed based on recent studies. The model was validated by available experimental data. The influence of H2, CO and CH4 on SNCR process was investigated by chemical kinetics calculation. The results indicate that H2 is more effective to lower SNCR temperature window than CO and CH4. While the additives concentration is low, CH4 is more effective than CO. But when the molar ratio of additives and initial NO exceeds 3, the effect of CO begins to catch up that of CH4. The promotion mechanisms of them were identified through sensitivity and rate-of-production analysis. The effects of these additives on NO reduction are achieved principally by promoting the production of OH, O and H radicals. Besides the reaction of CH3 radical with NO2 enhances NO reduction at lower temperature when CH4 additive is used.
  • Keywords
    atmospheric chemistry; atmospheric techniques; carbon compounds; hydrogen; molecule-molecule reactions; nitrogen compounds; organic compounds; reaction kinetics; reduction (chemical); CO; H2; NO; carbon monoxide; chemical kinetic model; gas additives; hydrogen molecule; methane; nitrogen oxide reduction; promoted SNCR process; promotion mechanism; radical reaction; rate-of-production analysis; selective noncatalytic reduction; sensitivity analysis; Additives; Boilers; Chemical processes; Combustion; Hydrogen; Kinetic theory; Nitrogen; Oxidation; Temperature distribution; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bioinformatics and Biomedical Engineering, 2008. ICBBE 2008. The 2nd International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1747-6
  • Electronic_ISBN
    978-1-4244-1748-3
  • Type

    conf

  • DOI
    10.1109/ICBBE.2008.509
  • Filename
    4535389