• DocumentCode
    1662659
  • Title

    ELFR experiment test verifying anomaly of nano-DRAM products in W-plug process

  • Author

    Chiang, Chiao-Lo ; Wang, Mu-Chun ; Chung, Yu-Min ; Chu, Chung-Ming ; Fan, Shou-Kong ; Kuo, Chin-Chia ; Yen, I-Shan

  • Author_Institution
    Dept. of Electron. Eng., Ming-Hsin Univ. of Sci. & Technol., Hsinchu, Taiwan
  • fYear
    2010
  • Firstpage
    250
  • Lastpage
    253
  • Abstract
    Early-life failure-rate (ELFR) test is a useful gauge to screen out the harmful or latent-defect memory products. In nano-regime, this test is still suitable to be applied on these kinds of memory products. Through this reliability test, some gap-filling quality with W-plug in via or contact structure is not compact well, causing the degradation in electrical characteristics and deteriorating the function operation with Shmoo function tester. Using the failure analysis skill, this failure mode was located and identified.
  • Keywords
    DRAM chips; failure analysis; integrated circuit reliability; integrated circuit testing; nanoelectronics; Shmoo function tester; W-plug process; early-life failure-rate test; failure analysis; latent-defect memory products; nano-DRAM products; reliability test; Manufacturing; Materials; DRAM; EDX; early life failure rate; failure analysis; function test;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2010 International Symposium on
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-4244-6693-1
  • Type

    conf

  • DOI
    10.1109/ISNE.2010.5669148
  • Filename
    5669148
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1662659